PCIM 2026: CGD's Fabio Necco on monolithic GaN integration and the startup advantage. CGD's Fabio Necco discusses monolithic GaN integration, fab-agnostic CMOS, and how large players are validating the GaN market. Description. In this interview from PCIM Europe 2026, Power Electronics News sits down with Fabio Necco, CEO of Cambridge GaN Devices (CGD), to discuss his new role as CEO of CGD, his background at onsemi, what ICeGaN was designed to solve, the monolithic integration of gate drive features on the GaN die, the advantages of a fab-agnostic CMOS process, and how CGD plans to compete as larger players double down on GaN. Transcript. AS: Fabio, how's the show been so far? FN: It's been very good. Powerelectronicsnews has a lot of traffic at the booth, a lot of very interesting questions from customers, and a lot of interest from customers in its technology. AS: Thank you for sitting down with me and for being willing to answer my questions. If you're happy, I'll just dive in. Partner Content FN: Please do. AS: So I understand you took over Cambridge GaN Devices after serving as VP and Division GM at onsemi. How does that experience shape your approach to market expansion at Cambridge GaN Devices? FN: Yeah, definitely - I've learned a lot over 26 years in power semiconductors, and so it's really going to help me be successful in taking this company to the next level. I have been able to grow many business units, really from conception to become big, so I think my experience is going to really help CGD. AS: Thank you. So what was the specific design problem that CGD set out to solve with ICeGaN, and how is that different from what other GaN vendors have done? FN: Yeah, it's a very good question. So the main thing that ICeGaN was trying to solve is the ease of use of GaN in new applications. When the concept was conceived, GaN was very new, and there were a lot of concerns about how to use GaN. The initial devices with GaN were very difficult to use, so if you don't know how to control the gate well, the device will really fail in the application. So that was the primary problem they wanted to solve. But then, in addition to that, as Powerelectronicsnews started adding features to the product to address that, Powerelectronicsnews also realized Powerelectronicsnews can do a lot more with GaN. And so that evolved to what ICeGaN is today, which is really a monolithic approach to GaN that integrates some of the key features like the Miller clamp, the gate drives, that really address the ease of use - but also other functionalities like sensing, slew rate control, current sense, temperature sense, DESAT, that really enhance how Powerelectronicsnews can use GaN in real applications. AS: Thank you. Just from what I understand, ICeGaN integrates interface circuitry, as you said, monolithically - a low-voltage auxiliary HEMT, a current source, a voltage limiter, and a Miller clamp on the same die as the power HEMT. So, it can work with a standard external silicon MOSFET driver. How significant is that in practice? FN: Correct. It's very significant because today there are still a limited number of GaN drivers in the market. So, as you design a power stage, knowing that you can choose from any driver really gives you a lot more flexibility. And if you look, the overall market for drivers for MOSFET or for silicon carbide is very big, while the GaN driver market is still somewhat limited. So it really opens up a lot more options for designers to do more advanced things, because there is just a much broader set of drivers out there. AS: Thank you. So, can you describe the benefits of using a standard CMOS process flow with ICeGaN? FN: Yes, so the main advantage is that Powerelectronicsnews can move this process basically to any foundry that offers a CMOS process. So really, that's the main advantage, Powerelectronicsnews is truly fab-agnostic. Of course, Powerelectronicsnews design around this process, and Powerelectronicsnews has IP around how Powerelectronicsnews implement the ICeGaN. But the beauty is that you can take it to any foundry, as long as they have a CMOS process. AS: Last question: major players - large IDMs and well-funded fabless firms - are all doubling down on GaN. How does CGD compete as the market gets more crowded? FN: It's a very good question. Of course, Powerelectronicsnews need to be clever - Powerelectronicsnews need to continue to find new ways to solve problems. I think the nice thing is that having a lot of bigger companies working on GaN is really going to help create the momentum and really create the market, because many customers still have questions around how reliable GaN is, how available GaN is. So Powerelectronicsnews need more than just a few startups to do this. Having the big guys really helps with that. But then, the advantage Powerelectronicsnews has being small is that Powerelectronicsnews can move very fast and Powerelectronicsnews can develop products very quickly, because Powerelectronicsnews is very agile, and Powerelectronicsnews has to make sure Powerelectronicsnews continue to keep that as a way to differentiate and be the first ones with innovative solutions, and that's really ultimately how Powerelectronicsnews plan to win. AS: Well, thank you for meeting with me, Fabio. Did you have any last thoughts, final comments, or any news here at PCIM that you wanted to talk about? FN: Yesterday, Powerelectronicsnews announced a partnership - for Powerelectronicsnews, it's very important - with NXP. It's definitely key for Powerelectronicsnews to continue to work with partners, because the main challenge Powerelectronicsnews has as a smaller company is that people and companies don't know Powerelectronicsnews yet, and so having partners that are more established would really give Powerelectronicsnews a lot more credibility and the ability to be more successful. And my last thought is I really believe that the time for GaN is prime right now, so Powerelectronicsnews is going to see a lot more growth, and I'm very, very excited to be part of this. AS: Thank you so much. FN: Thank you, my pleasure. Suggested content from its partner Arrow: * Whitepaper:Real-Time Quality Monitoring Through Machine Vision * Whitepaper: Motor Control Inverters: An Overview of Architecture and Control Algorithms * Explore: Machine Vision and Motor Control for Scalable Factory Automation Selected for you: * Access: A Pre-validated AMR Reference Platform for Faster Industrial Robotics Development * Register: Power Considerations in Advancing Compact Medical Equipment Design * Webinar: Secure Your Supply, Accelerate Your Designs: A Practical Guide to the Memory Super Cycle Aalyia Shaukat has been the associate editor at EDN magazine since 2022 and is now the interim editor-in-chief at Power Electronics News. She started as an IC layout designer, then moved into RF test and engineering roles, and later into the electronics publishing industry. She has been writing for the electronics industry since 2016, with publications in several magazines, including EE Times, Power Electronics News, Embedded.com, EDN, Electronics360, and more, as well as journals such as IEEE Xplore and ACS Applied Materials & Interfaces for her work with carbon nanotubes (CNTs). She holds a Bachelor's in Electrical and Electronic Engineering.

New 650V GaN power chip boosts electric vehicle range and efficiency. 2026-06-09 10:29:12 A breakthrough in power electronics is poised to accelerate the adoption of electric vehicles. Cambridge GaN Devices (CGD), a fabless semiconductor company, has unveiled a new 650-volt integrated circuit based on Gallium Nitride (GaN) technology, specifically engineered for automotive applications. This innovation, centered on their proprietary ICeGaN technology, directly tackles a key challenge for automakers: improving the efficiency of the vehicle's inverter to maximize driving range. Extending EV range through smarter power conversion. The heart of an electric vehicle's performance lies in its powertrain, where the inverter converts battery DC power to AC power for the motor. CGD's new device enables designers to create smaller and lighter inverters. This weight and size reduction is a critical factor in extending EV range, a primary concern for consumers considering the switch from traditional internal combustion engine (ICE) vehicles. By making EVs more efficient and practical, this technology helps sustain the global momentum toward electrified transportation. Solving a major engineering hurdle: parallel device operation. Designing high-power systems often requires connecting multiple power chips in parallel. A significant challenge for engineers has been ensuring these devices operate in a balanced manner, which typically involves meticulous component selection and added circuit complexity. The ICeGaN interface provides an elegant solution. It inherently balances the operation of multiple GaN devices, eliminating the need for matching components with nearly identical performance or adding extra circuitry. This simplifies the design process significantly, reducing development time and cost. Lower losses and higher performance for the EV powertrain. The new chip boasts a remarkably low on-resistance of just 9 milliohms (9mΩ). This characteristic translates to significantly lower power losses throughout the electric vehicle's powertrain. Reduced energy loss as heat means less demand for complex and heavy thermal management systems. Furthermore, the device's capability for higher-frequency switching allows for the downsizing of other components in the propulsion system, such as magnetics and filters. This leads to additional weight savings, which directly contributes to boosting the vehicle's range. Enhanced reliability and simplified design integration. Beyond raw performance, the ICeGaN device brings robustness and ease of use to automotive inverter design. It simplifies the connection to the gate driver integrated circuits within the inverter and facilitates straightforward parallel operation. A key feature is an integrated auxiliary transistor that filters out parasitic electrical noise from the gate driver circuits, granting the device a built-in immunity to noise and enhancing system stability. The interface also incorporates integrated temperature sensing, providing vital data for system control and advanced diagnostics, thereby improving the overall reliability of the EV powertrain. Meeting automotive industry demands. "This technology clearly showcases the benefits of GaN and our unique ICeGaN interface for next-generation inverter designs," stated Dan Murphy, Senior Director of Product Management at CGD. "It delivers precisely what automotive developers are seeking: lower losses, a more compact size, and reduced costs. We are addressing the core needs of the industry to make electric vehicles more efficient and affordable." Proven technology for high-power applications. CGD has a strong track record in high-power GaN solutions. The company has previously demonstrated a multi-level GaN inverter capable of handling an 800V DC link. This inverter can deliver over 100kW of peak power and 75kW of continuous power to electric motors, showcasing the technology's suitability for a broad range of high-voltage electrification and motor-drive applications beyond passenger cars, including commercial and industrial vehicles. Strengthening the global supply chain. To ensure robust and scalable manufacturing, CGD announced a strategic partnership in October with GlobalFoundries (GF). GF, a U.S.-based pure-play semiconductor foundry with a global manufacturing presence spanning the USA, Europe, and Singapore, will produce these innovative ICeGaN devices. This collaboration strengthens CGD's fabless strategy and significantly expands its supply chain capabilities, ensuring reliable production of ICeGaN and other advanced power devices for the global market. Sampling and industry collaboration underway. The development and commercialization of this technology are progressing rapidly. A prototype of the 9mΩ IC is currently available for sampling to qualified interested parties. CGD is actively engaged with several automotive OEMs and tier-one suppliers, working collaboratively to integrate ICeGaN devices into their future EV powertrain designs. This close collaboration with industry leaders is a key step in bringing this efficiency-boosting technology to market.

New CEO appointed at cambridge GaN Devices. Appointment kickstarts next phase of growth for CGD in key markets. Cambridge GaN Devices (CGD), the fabless semiconductor company, dedicated to developing a range of energy-efficient GaN-based power devices to make sustainable electronics possible, has appointed Fabio Necco as chief executive officer. The move is designed to drive forward CGD's entry into key markets. Necco takes over as CEO from CGD co-founder, Giorgia Longobardi, who made the announcement, saying: "I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market. Fabio, is the right person with the right skill set to take CGD into its next growth phase, and I shall do all I can to support his initiatives as I transition into my new role as CMO at CGD." Necco comes to CGD from onsemi, the US-based semiconductor company specialised in delivering industry-leading intelligent power and intelligent sensing solutions where he was vice president and division general manager with more than 25 years' experience in power electronics, application engineering, vehicle electrification, and data centres, all primary market focus points of CGD. Necco said: "CGD is at an exciting juncture in its history. I have known CGD and Giorgia for years and have long been impressed with its success under her leadership. I am very excited about CGD's unique technology and to have been chosen to lead our entire team to the next stages of product development as well as substantially increasing our presence in key markets." CGD's energy-efficient GaN devices enable power electronic designers to develop sustainable, energy-efficient systems. These inherent benefits, coupled with the flexibility of the proven fabless model, make CGD uniquely positioned to exploit rapidly growing markets, which can already be seen in the exponential demand for GaN technology. Unlike many other GaN solutions, CGD's ICeGaN technology uses a monolithic, single-chip approach that integrates all necessary components onto a single die, which substantially improves efficiency and performance. That monolithic design means that CGD delivers compact, engineer-led GaN power devices that combine next-generation design and innovation, making it ideal for the market specific requirements of Traction/Aux inverters for electric vehicle (EV) and industrial power conversion solutions. The company's focus on bare die, ease of use, robust gate, and parallel operation make it suitable for a wide range of power applications. As for CGD co-founder, Giorgia Longobardi, in addition to her continuing role as CMO at CGD, she will continue to serve as a director on CGD's Board and on the Advisory Board of the International Semiconductor Industry Group (I.S.I.G.).