Full-Time

Materials Engineer

Posted on 9/5/2026

ASML

ASML

10,001+ employees

Manufactures photolithography systems for semiconductors

Compensation Overview

$109.2k - $150.2k/yr

Company Does Not Provide H1B Sponsorship

San Diego, CA, USA

Remote

On-site presence is required in San Diego; flexible arrangements may allow up to two remote days per week.

Bachelor's, Master's, PhD

Category
Mechanical Engineering
Required Skills
Microstructural Analysis
Materials Engineering

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Requirements
  • A bachelor's degree in Materials Science, Materials Engineering, Mechanical Engineering, Chemical Engineering, Nano Engineering, or a related field is required; a master's or PhD is preferred.
  • At least 5 years of relevant experience in Materials Engineering is required.
  • Strong understanding of engineering metals, specialty alloys, and refractory materials is required.
  • Experience with material characterization, microstructural analysis, and surface evaluation techniques is required.
  • Hands-on experience with analytical tools such as scanning electron microscopy, energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, or similar characterization technologies is required.
  • Experience supporting failure analysis, root-cause investigations, and reliability improvement efforts is required.
  • Strong analytical and problem-solving capabilities are required.
  • Ability to learn and apply new technologies, methods, and tools is required.
  • Ability to identify technical risks, bottlenecks, and improvement opportunities is required.
  • Ability to work independently with minimal supervision while contributing to team objectives is required.
  • Willingness to work in a clean room environment while wearing required protective equipment for the entire shift is required.
  • Ability to perform the stated physical activities, including sitting, walking, standing, reaching, crouching, and occasionally lifting or moving up to 20 pounds, is required.
  • Legal authorization to access United States-controlled technology before beginning work is required.
Responsibilities
  • Evaluate material compatibility within the EUV Lithography Light Source, including interactions under high-temperature, vacuum, plasma, and contamination-sensitive conditions.
  • Provide materials guidance to design teams during concept development, detailed design, and verification phases.
  • Analyze material interactions including corrosion, diffusion, oxidation, and multi-material compatibility.
  • Apply knowledge of ferrous metals, non-ferrous metals, specialty alloys, and refractory metals.
  • Perform and interpret hardness testing, tensile and compressive testing, fracture analysis, and metallography.
  • Analyze material microstructures, including grain morphology and phase distribution.
  • Evaluate surface roughness, contamination, and cleanliness.
  • Use scanning electron microscopy, energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy to support technical investigations and decisions.
  • Lead or support structured failure analysis and root-cause investigations.
  • Relate material behavior to system-level performance and reliability.
  • Document findings, recommendations, and mitigation strategies in technical reports and presentations.
  • Collaborate with development engineers, scientists, suppliers, and quality teams to resolve materials-related challenges.
  • Provide technical recommendations during design reviews and support project decision-making.
  • Support project planning activities, including deliverables, schedules, resource planning, and budget considerations.
  • Present technical data and findings to engineering teams, management, and external suppliers.
  • Travel domestically and internationally up to 10% as required.
Desired Qualifications
  • Experience in semiconductor, high-tech manufacturing, or advanced technology environments is preferred.
  • A master's or PhD degree in Materials Science, Materials Engineering, Mechanical Engineering, Chemical Engineering, Nano Engineering, or a related field is preferred.

ASML designs and manufactures photolithography systems for semiconductor manufacturing. Its main products are deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography machines that print circuit patterns on silicon wafers, with EUV enabling smaller features. The company sells these systems to leading chipmakers and earns substantial revenue from installation, maintenance, and upgrades over the machines’ lifetimes. Its goal is to help continue scaling semiconductors by leading in high-end lithography and maintaining strong relationships with customers like TSMC, Samsung, and Intel.

Company Size

10,001+

Company Stage

IPO

Headquarters

Veldhoven, Netherlands

Founded

1984

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Simplify Jobs

Simplify's Take

What believers are saying

  • Reuters said ASML raised 2026 revenue guidance to €43 billion-€45 billion on strong demand.
  • Intel, TSMC, and Samsung committed to High NA, with adoption starting 2028-2030.
  • ASML's 2027-2028 capacity expansion is already largely booked, signaling sustained order visibility.

What critics are saying

  • U.S. lawmakers proposed the MATCH Act in 2026, threatening ASML's China revenue.
  • China represented about 20% of 2026 sales, exposing ASML to export-control shocks.
  • Canon's nanoimprint push and SMEE's DUV progress attack mature-node revenues and long-term dominance.

What makes ASML unique

  • ASML remains the sole EUV lithography supplier, controlling advanced chip-node access.
  • Its High NA EUV platform already runs at four customers and scales toward HVM.
  • The September 8, 2026 Eindhoven campus expands manufacturing capacity and factory automation.

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Benefits

Flexible Work Hours

Remote Work Options

Growth & Insights and Company News

Headcount

6 month growth

0%

1 year growth

0%

2 year growth

0%
Yahoo Finance
Sep 8th, 2026
ASML breaks ground on new €350,000m² Eindhoven campus to boost manufacturing capacity

ASML has begun constructing a new industrial campus in the Brainport region, Netherlands. The company held a groundbreaking ceremony on 8 September 2026 at Brainport Industries Campus North, which was attended by Dutch Prime Minister Rob Jetten. The multi-phase development will span approximately 350,000 square metres and provide capacity for up to 20,000 workplaces. The first phase, expected to complete in 2029, will house at least 3,000 employees relocating from existing ASML locations. The campus will feature a new flow factory implementing ASML's next-generation manufacturing operating model for the TWINSCAN factory. This model aims to enable faster, more efficient and higher-scale module production and installation.

Yahoo Finance
Sep 8th, 2026
ASML secures TSMC and Samsung commitments for $400M EUV machines as AI demand drives chip production race

ASML has secured commitments from Samsung and TSMC to adopt its latest High NA EUV lithography equipment, joining Intel in using machines costing $400 million each. Samsung will begin high-volume manufacturing with the technology by 2028, whilst TSMC plans to start from 2030. The companies also agreed to shift from 6-inch to 12-inch photomasks, a move expected to increase throughput by 40% and reduce costs. ASML's chief technology officer Marco Pieters called this "a significant step in productivity". ASML is the sole manufacturer of EUV lithography equipment necessary for producing advanced AI accelerators. TSMC had previously hesitated to adopt the more expensive High NA machines, questioning whether productivity gains justified the cost.

Sifted
Sep 2nd, 2026
Exclusive: Samsung, Nvidia, ASML and Scaleup Fund back Mistral in €3bn fundraise

Mistral is set to announce a €3bn Series D round led by Samsung, with participation from Nvidia, ASML and the European Union’s Scaleup Fund

Wccftech
Sep 2nd, 2026
China trails ASML's advanced EUV chip making technology by 10 years, says investment bank UBS as progress is stuck at ASML's 2004 level.

China trails ASML's advanced EUV chip making technology by 10 years, says investment bank UBS as progress is stuck at ASML's 2004 level. Ramish Zafar - Sep 2, 2026 at 04:26pm EDT China is unlikely to match Dutch chip manufacturing ASML's EUV machines for ten years, suggests a new report from investment bank UBS. EUV lithography scanners are a key link in the global advanced chip manufacturing industry, and without them, making the latest chips is complicated and costly. US restrictions on China prevent the country's major chip manufacturers from acquiring the EUV machines, and UBS outlines that China can overcome the gap for older immersion-based DUV lithography much sooner than it can for EUV technology. Chinese EUV chip manufacturing technology development is similar to ASML's in 2004, says UBS. Back in 2003 and 2004, ASML was conducting functional and vacuum testing for its EUV tools in order to reduce production risks for 45-nanometer and more advanced nodes. During the same time period, advanced mirrors capable of working with 13.5 nm wavelengths were being developed, and since traditional light sources were limited to working with EUV, ASML was also working to develop laser and plasma technologies. Now, ASML is focused on developing high-NA EUV lithography systems, which use mirrors and optics with high numerical aperture mirrors to increase focus and sharpness. Both these systems mark a significant upgrade over traditional DUV systems that initially relied on air and then ultra-pure water for certain phases of the lithography process. Now, a fresh report from investment bank UBS claims that when it comes to EUV development, China's progress is similar to where ASML was in 2004. Consequently, the bank believes that the Asian country will be unable to achieve parity with ASML in EUV over the next ten years. The bank notes that ASML continues to depend heavily on China for its sales, with 33% of the firm's 2025 sales coming from the country to mark a significant jump over the 10% before 2020. The conclusion regarding EUV progress is based on patents, according to the investment bank. The two firms that UBS believes are important when it comes to manufacturing equipment are the state-backed Shanghai Micro Electronics Equipment (SMEE) and startup Shanghai Yuliangsheng Technology Co., Ltd. However, instead of EUV, these firms need to be watched for deep ultraviolet (DUV) development, says UBS. The bank adds that as opposed to EUV, China can catch up to ASML in immersion DUV lithography within two to five years. Immersion lithography, also called wet lithography, uses a layer of ultra-pure water to reduce the light's wavelength and increase resolution and depth of focus. Yet, despite the advances, the country will continue to rely on ASML due to differences in yield and throughput, believes UBS. However, the bank models its bear case for ASML on new restrictions on DUV sales to China and adds that it expects China to represent 15% to 20% of ASML's sales in 2027. About the author: Ramish is a seasoned technology writer and editor with more than a decade of experience. He specializes in semiconductor fabrication and market analysis. With a background in finance and supply chain management - via his bachelors in Finance and a micromasters in supply chain management from MIT - Ramish combines financial rigor with deep industry insight to deliver accurate and authoritative coverage. Follow Wccftech on Google to get more of its news coverage in your feeds.

United Daily News
Sep 1st, 2026
2026-09-01 10:15 Economic Daily News / Reporter Yin Huizhong / Taipei Real-time Report

2026-09-01 10:15 Economic Daily News / Reporter Yin Huizhong / Taipei Real-time Report ASML released the latest information at the SEMICON Taiwan 2026 Advanced Semiconductor Process Technology Forum, mentioning that High NA EUV is accelerating toward the high-volume manufacturing (HVM) stage. Globally, the cumulative number of wafers exposed by EXE systems has exceeded 1.35 million. As customer usage continues to increase, system learning and high-volume production preparation are further accelerated. Globally, 10 High NA EUV systems installed at 4 customers are already in operation, while 3 additional systems are being shipped or installed. ASML noted that the certified EXE:5200B has achieved 135 wafers per hour (WPH) in acceptance testing, with productivity that supports high-volume manufacturing. High NA systems demonstrate excellent machine-to-machine overlay and focus performance, maintaining stable system performance to meet mass-production environment requirements. The global High NA EUV fleet availability has now risen to 84%, with continued improvement toward the 93% target. ASML is incorporating experience accumulated from the existing NXE platform into the EXE system, including improving diagnostic capabilities and preventing recurring issues to enhance system stability. High NA EUV has entered the practical application stage in advanced processes. High NA EUV has achieved an important milestone, being applied for the first time to high-volume logic products. High NA is seen as the next important lithography technology milestone in advanced semiconductor manufacturing, supporting future process scaling. For 2D DRAM scaling, High NA EUV imaging capability can support technology extensions for up to five future process nodes. 0.55 NA single exposure can further improve process economics. Combined with related key technologies, High NA EUV can increase the number of process layers using 0.55 NA single-exposure patterning. By replacing more complex multiple-patterning lithography processes with single exposure, High NA EUV helps reduce the complexity and cost of advanced processes. High NA EUV single-exposure imaging supports continued scaling to smaller pitches, balancing process capability and cost-effectiveness at advanced nodes. High NA continues to improve focus control and half-field challenges. EXE further enhances focus control, maintaining focus performance comparable to NXE. Through wafer leveling algorithms, focus correction, and a 148 mm wafer chuck design, the expected focus tolerance can reach more than 30 nm. For half-field design requirements, High NA EUV provides application flexibility through a 175 μm stitching compensation area. In DRAM applications, only chips with specific odd-row designs require stitching. High NA brings new chip design opportunities. High NA EUV not only improves lithography resolution but also opens new design space for 2D chip layout. Higher resolution enhances logic cell density, further supporting logic process scaling. High NA can also help optimize interconnect routing, potentially reducing the total number of metal layers required. EXE system productivity will continue to improve. ASML will continue to enhance the EXE platform's throughput performance, progressing from the EXE:5200B to the next-generation EXE:5400E. Productivity improvements will come from multiple enhancements, including: improving EUV light source efficiency, improving wafer handling efficiency with PEP-related solutions, and reducing unnecessary losses and inefficiencies during system operation. ASML's technology roadmap aims to increase acceptance-test throughput from the current 135 wafers per hour to 180 wafers per hour by the end of this decade. Related technology development includes increasing EUV light source power at the wafer level and accelerating wafer and reticle handling speeds. ASML has established a 0.55 NA EUV technology roadmap to support future process development with a long-term stable platform architecture. The High NA EUV platform is expected to provide a stable system architecture for more than 10 years, continuously extending system capabilities through productivity improvements. Combining higher resolution, single-exposure imaging, continuously improving productivity, and design flexibility, High NA EUV will continue to support long-term scaling needs in advanced semiconductor manufacturing.