Radio Frequency Technology Development Engineer

This role is responsible for developing, optimizing, and qualifying FEOL and BEOL semiconductor devices and processes to meet performance, cost, and yield goals. The position leads design‑of‑experiments (DOE), drives root‑cause problem solving, and collaborates closely with process, characterization, and failure analysis teams to improve device performance and manufacturing robustness. The role also supports customer technical inquiries, establishes new design rules and test methodologies, and ensures all work is performed in compliance with Environmental, Health, Safety, and Security requirements.

About GlobalFoundries:

GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.

Summary of Role:

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for a device and integration engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT.

Essential Responsibilities      

• Responsible for development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirements
• DOE design, execution, and analysis of results.
• Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield
• Own and drive technical process problem solving.
• Interact with internal & external customers and respond to technical queries.
• Establish new technology design rules, test structures and test methodologies.
• Innovate new methods of continuous process/device improvement.
• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements

Other Responsibilities:

· Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

• Education: Master’s Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 8-10 years of experience or MS +7 years or PhD + 5 years
• Years of Experience: 5+ years in semiconductor processing
• Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
• Experience with Cadence or any other layout and simulation tool
• Strong data analysis skills
• Fluency in English Language – written & verbal
• Ability to relocate to Essex Junction, VT

Preferred Qualifications:

• 8+ Years of Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
• Experience of leading a device or process development project
• TCAD experience
• Experience in RF device design and characterization including high frequency design, measurement and analysis
• Excellent interpersonal skills, energetic, motivated, and self-driven
• Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
• Outstanding communication skills - both written and verbal
• Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies
• Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs
• Demonstrated ability to meet deadlines and commitments

Expected Salary Range

$118,000.00 - $210,000.00

The exact Salary will be determined based on qualifications, experience and location.