Senior Memory Design Engineer

Salary Range: 190000 to 215000 (Currency: USD) (Pay period: per-year-salary)

Key Qualifications

• The ideal candidate will have 12-15 years of custom circuit design experience from RTL-GDS for CPU and SoC applications
• Prior experience and proven success of successfully designing high performance SRAM memories, Register file memories, SRAM compilers, data path designs and standard cells
• Experience designing transistor-level custom circuits in advanced FinFET technology nodes
• Must have a solid experience with the custom circuit tool flows for delivering design collaterals
• A solid understanding of device physics, process technology and circuit design techniques for high performance, low power, and power gating
• Experience with advanced process design rules and supervising mask design
• Knowledge developing automation for compilers and standard cells
• Post-Silicon test and debug experience
• Ability to work well in a team and be productive under aggressive schedules.
• Excellent problem solving, written and verbal communication

Responsibilities

• Drive design and development of SRAM, register file, custom cells to enable high performance and low power designs
• Work with microarchitecture team to gather specifications and drive optimal implementation 
• Conduct early sizing estimates and PPA analysis . 
• Design entry and simulations for optimal design sizing.
• Design equivalence checking using the latest industry standard LEC tools
• Work closely with mask designers on custom design implementation, DFM and  yield enhancement features
• Deliver high quality design collateral 
• Collaborate with the CPU and SoC Physical design teams on floorplanning, placement, timing and power closure of the custom design
• Interact with technology team, participate in developing design and test plans Collaborate with CAD teams and drive design flow enhancements

Education and Experience

• Master’s Degree or Bachelor’s Degree with  12-15 years of experience