Full-Time
Manufactures discrete semiconductors, logic devices, MOSFETs
No salary listed
Hamburg, Germany
In Person
Master's
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Nexperia operates as a global supplier of semiconductor components, focusing on discrete semiconductors, logic devices, and MOSFETs. It serves automotive and industrial customers, providing parts that help electronic systems manage power, process signals, and protect data. The company designs, manufactures, and distributes these high-performance components, which are used in applications such as power management, autonomous driving, and data protection. Compared with competitors, Nexperia emphasizes reliability, quality, and targeted expertise in automotive and industrial markets, supported by ongoing improvement and product development. Its goal is to maintain leadership in supplying essential semiconductor parts that enable safer, more efficient, and more capable electronic systems.
Company Size
1,001-5,000
Company Stage
Acquired
Total Funding
$880M
Headquarters
Nijmegen, Netherlands
Founded
1953
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Flexible Work Hours
Paid Vacation
Commuter Benefits
Employee Discounts
Company Social Events
Performance Bonus
Paid Sick Leave
Life Insurance
Parental Leave
Professional Development Budget
Nexperia & Aurobay explore GaN and sic powertrain solutions. The companies will evaluate co-design and system-level optimization for traction inverters and power generation systems. September 5, 2026 Nexperia and Aurobay Technologies, part of Horse Powertrain, are considering a strategic partnership to develop advanced power semiconductor technologies for automotive applications. The potential collaboration would bring together Nexperia's capabilities in gallium nitride (GaN) and silicon carbide (SiC) semiconductors with Aurobay Technologies' expertise in powertrain engineering, system design, and integration. The companies are building on earlier work involving Nexperia's GaN devices in Aurobay Technologies' compact power generation system designed for range-extender vehicles. That project highlighted how wide-bandgap (WBG) semiconductor technologies can deliver higher power-conversion efficiency while helping reduce system weight and footprint. It also showed their ability to operate reliably under demanding automotive conditions. Following these results, Nexperia and Aurobay Technologies plan to examine additional opportunities to enhance power electronics architectures for hybrid and electrified vehicles. Potential areas include traction inverters and power generation systems, where semiconductor performance and effective system integration play an important role in determining efficiency, power density, and overall vehicle architecture. The proposed cooperation would place greater emphasis on integrating semiconductor development with powertrain engineering from the early stages of product development. The companies will explore joint engineering and co-design strategies that evaluate semiconductor properties alongside specific powertrain requirements. This system-level approach could help uncover new ways to enhance electrical performance, improve efficiency, and create smaller, more highly integrated powertrain systems. Wide-bandgap (WBG) semiconductors are gaining greater attention in the automotive sector as manufacturers work to improve powertrain efficiency while making electrical systems smaller and lighter. Gallium nitride (GaN) enables fast switching and efficient power conversion, whereas silicon carbide (SiC) is well suited for high-voltage, high-power applications that demand strong thermal performance. Through their collaboration, Nexperia and Aurobay Technologies will examine how both technologies can be integrated into various powertrain designs. The initiative aims to help advance scalable, high-performance propulsion and power-generation systems for upcoming electric and hybrid vehicles. By combining semiconductor innovation with powertrain engineering and integration expertise, the companies hope to identify practical ways to expand the use of WBG power devices across automotive applications.
Nexperia explores collaboration power semiconductor solutions. 2 September 2026 Nexperia announced it will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain Ltd. (a joint venture between Renault Group and Geely). The collaboration aims to combine Nexperia's expertise in gallium nitride (GaN) and silicon carbide (SiC) semiconductor technologies with Aurobay Technologies' capabilities in powertrain system design and integration. Building on a successful existing collaboration, the companies aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms. The collaboration follows the successful deployment of Nexperia's GaN devices in Aurobay Technologies' highly integrated power generation system for range extender applications. The project demonstrated the potential of wide-bandgap semiconductor technologies to improve efficiency, reduce system size and weight, and enhance overall performance in demanding automotive environments. Building on this foundation, Nexperia and Aurobay Technologies will assess opportunities to further optimise power electronics architectures for applications including traction inverters and power generation systems. By combining Nexperia's WBG expertise with Aurobay Technologies' experience and capabilities in powertrain systems, the companies intend to evaluate joint engineering approaches, including early-stage co-design and system-level optimisation. As vehicle manufacturers seek higher efficiency, greater power density and more compact powertrain architectures, wide-bandgap semiconductor technologies are becoming increasingly important enablers of electrification. Through this collaboration, Nexperia and Aurobay Technologies aim to explore new approaches that accelerate the adoption of advanced power semiconductor solutions and support the development of scalable, high-performance propulsion systems for future mobility. Edoardo Merli, Head of Business Group Wide-Bandgap, IGBTs and Modules at Nexperia, said: "GaN and SiC technologies offer significant opportunities to improve efficiency, power density and system performance in automotive applications. By working closely with Aurobay Technologies, we can better understand system-level requirements and evaluate how advanced semiconductor technologies can deliver measurable benefits at the vehicle level. We look forward to building on our successful collaboration and exploring new opportunities together." Dr. Ma Yongquan, Chief Engineer, Advanced Engineering on Electrical Components at Aurobay Technologies, said: "Our experience integrating Nexperia's GaN technology into a highly integrated power generation system demonstrated the potential of close collaboration across the value chain. By combining our expertise in powertrain systems with Nexperia's semiconductor innovation, we can evaluate new approaches to improving efficiency, performance and packaging for future electrified propulsion systems." Keep up to date with the most important news. Positioning X-FAB as the answer to legacy node obsolescence and supply chain risks. Transense and Unison collaboration advances in hybrid-electric flight. 2 September 2026
Nexperia reports 18% revenue growth in Q2. Nexperia has reported Q2 2026 revenue of USD 355.6 million, an increase of 18.4% compared to Q1. The company says profitability and cash generation also improved QoQ, with operations outside China achieving positive net income and operating cash flow. The revenue improvement reflects capacity ramp-up initiatives and strengthening demand, particularly in computing and data storage applications driven by AI infrastructure investment. Automotive and industrial markets also showed encouraging development, according to a press release from Nexperia. "Our Q2 results demonstrate that the actions we have taken across the business are delivering tangible results. Compared to Q1, we achieved improvements in revenue, profitability and cash generation while continuing to invest in our future. We continue to make progress in stabilising our supply chain, ramping up capacity and supporting our customers reliably," said Stefan Tilger, interim CEO of Nexperia. The Q2 results build on the resilience Nexperia reported for Q1, when the company also posted positive net income and operating cash flow despite what it described at the time as the loss of control over its China operations following a dispute with parent company Wingtech. The company notes that its Chinese entities - Nexperia (China) Ltd. and several others - were deconsolidated with effect from October 1, 2025, and are not included in the reported figures. From manufacturing and design to supply chains and emerging technologies, the electronics industry never stands still. Meet the people driving it forward at the upcoming Evertiq Expo events. The next stop is Evertiq Expo Gothenburg on September 17, where industry professionals gather to exchange knowledge, discover new solutions and build valuable business connections. To stay up to date with the latest developments, sign up for the Newsletter.
Nexperia Semiconductors (China) has launched 19 automotive MOSFET products using 12-inch wafer technology, marking the first mass production of automotive-grade high-voltage MOSFETs at this scale. The company says per-chip costs drop by approximately 50% compared with 8-inch wafers and up to 70% versus 5-inch production. Built on Nexperia's T2X platform, the 40–100V range devices achieve on-resistance as low as 0.48 milliohms for 40V products and 0.99 milliohms for 100V variants, improvements of up to 50% over previous generations. The MOSFETs target applications in body control, battery protection, and power systems for electric vehicles. Mass production deliveries to Chinese new energy vehicle manufacturers are scheduled for the second half of 2026. All products exceed AEC-Q101 automotive standards.
A portfolio of 19 automotive MOSFETs debuts: the world's first 12-inch mass production cuts per-chip cost by up to 50%. CHINA, August 24, 2026 /EINPresswire.com/ - Power MOSFETs are the heart of every electrical device - home appliances, industrial motors, new energy vehicle electronic controls, AI data center power supplies. The new-generation T2X technology platform optimizes gate structure, doping profile, and termination design to sharply reduce on-resistance at the same chip area, while also improving dynamic parameters such as gate charge and gate-drain charge. The result is a simultaneous reduction in both conduction and switching losses, breaking the traditional constraint that low on-resistance requires a large die. Nexperia ranks No. 1 globally in small-signal MOSFETs and among the global top three in automotive power MOSFETs. Nexperia China's proprietary 12-inch SGT T2X automotive MOSFETs are industry-leading in conduction loss, thermal performance, surge withstand capability, and EMI characteristics, filling the gap in 12-inch automotive-grade high-voltage MOSFETs. The products entering mass production this time have completed a full set of standardized reliability verification, covering both automotive and industrial grades. According to industry information, the effective chip output of a single 12-inch wafer is about 5.7 times that of a 5-inch wafer, about 4 times that of a 6-inch wafer, and about 2.2 to 2.4 times that of an 8-inch wafer. In terms of per-chip cost, this means a reduction of about 70% compared with 5-inch, about 60% compared with 6-inch, and about 50% compared with 8-inch. The new-generation 40V products achieve an on-resistance as low as 0.48 milliohms, an improvement of more than 50% over the previous generation; the 80V platform reaches a minimum on-resistance of 1.3 milliohms, 45% lower than the previous generation. Device thermal resistance and avalanche energy lead the industry by about 20%, and 2,000-hour board-level temperature cycling reliability is likewise leading. Nexperia China has released a portfolio of 19 automotive MOSFET products in the 40-100V range, designed for body control, infotainment, battery reverse protection, and LED lighting. Automotive-grade 100V products achieve on-resistance as low as 0.99 mΩ and can handle safe currents above 460 A, suitable for OBCs, traction inverters, and BMS. The new-generation MOS products have entered the supply chains of leading domestic new energy vehicle customers, with mass production delivery in the second half of 2026. The entire series exceeds the AEC-Q101 standard, and failure rates for core devices in braking, chassis, steering, and battery protection are controlled at the parts-per-billion level. On product iteration: Nexperia's development cycle used to take 24 to 36 months; now it takes 6 to 12 months. The localization ratio of some core devices has been pushed from under 20% to nearly 100%. About Nexperia Semiconductors (China) Ltd.: As a frontrunner in the development and production of basic semiconductor devices, Nexperia Semiconductors (China) Ltd. (Anshi China) offers devices that are widely used in various applications such as automotive, industrial, mobile, and consumer electronics, supporting almost all basic functions of electronic design worldwide. Nexperia Semiconductors (China) Ltd. (Anshi China) provides products and services to customers globally, with these products becoming industry benchmarks in terms of efficiency (such as process, size, power, and performance) and gaining widespread recognition. Nexperia Semiconductors (China) Ltd. (Anshi China) boasts a rich IP product portfolio and a continuously expanding product range, and has obtained certifications under the IATF16949, ISO9001, ISO14001, and ISO45001 standards, fully demonstrating the company's firm commitment to innovation, efficiency, sustainable development, and meeting stringent industry requirements. TOM Nexperia Semiconductors (China) Ltd. [email protected] Legal Disclaimer: EIN Presswire provides this news content "as is" without warranty of any kind. Alternative Energy Reporter do not accept any responsibility or liability for the accuracy, content, images, videos, licenses, completeness, legality, or reliability of the information contained in this article. If you have any complaints or copyright issues related to this article, kindly contact the author above.