Full-Time
Facilities Instrumentation and Controls Technician
Posted on 7/15/2025
Wolfspeed
1,001-5,000 employees
Designs, manufactures SiC wafers and devices
No salary listed
Company Does Not Provide H1B Sponsorship
Durham, NC, USA
In Person
 Electrical Engineering (1) |
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- High School diploma, GED, or equivalent
- Minimum 5-years of related industry experience required.
- Experience with troubleshooting electrical controls and instrument calibrations.
- Must be able to work with minimal supervision and direction.
- Must have a general knowledge of low voltage and associated maintenance equipment and systems.
- Excellent communications skills required, both written and oral.
- Must be able to wear appropriate PPE and work around hazardous materials
- Ability to occasionally lift 50lbs.
- Ability to work in a non-climate-controlled environment.
- Ability to work in repetitive motions and pressure involving fingers, hands, and wrists, includes standing or walking over hard concrete surface, and climbing ladders
- Ability to wear fall protection if required
- Troubleshoot programming and system faults for plant FMCS equipment and modify existing programs to improve sequencing, add/modify/remove alarms, and aide in improved troubleshooting and error response within the plant PLCs, HMIs, and automated systems utilizing Rockwell's RSLogix 500, Studio 5000, Factorytalk Asset Center, Wonderware and Ignition software.
- Perform calibrations of Flow, Level, Temperature, Pressure, and Humidity Transmitters using approved test and calibrated equipment.
- Work with Facilities Operations, Mechanical, Electrical, Process and I&C Engineers to correct deficiencies and issues in systems across multiple sites.
- Perform PID loop tuning and adjustments.
- Read and comprehend blueprints and electrical control panel schematics.
- Help maintain instrument as-built and procedural documentation, and inventory of spare parts.
Wolfspeed specializes in silicon carbide (SiC) technology for energy-efficient power and RF applications. It designs, manufactures, and sells SiC wafers, power devices, and RF components for automotive, industrial, and telecommunications markets. Its products use SiC materials to enable higher voltage handling, faster switching, and better efficiency than traditional silicon-based devices. Wolfspeed’s approach combines material science with device fabrication to deliver high-performance power transistors, diodes, and RF components that meet demanding conditions. The company differentiates itself through its deep focus on SiC across wafers and devices, a broad product lineup, and a business model that includes both direct sales to manufacturers and licensing. Wolfspeed’s goal is to help customers achieve lower energy consumption and improved performance in their power and RF systems by accelerating the adoption of silicon carbide technology.
Company Size
1,001-5,000
Company Stage
IPO
Headquarters
Durham, North Carolina
Founded
1987
Simplify's Take
What believers are saying
- Refinanced $475.9M notes in April 2026, cutting debt by $97M and interest by $62M.
- Appointed Yasuhisa Harita as Asia Pacific president effective June 1, 2026, targeting Japan and Korea.
- Q3 2026 revenue hit $150M with 10kV MOSFET launch boosting EV and data center demand.
What critics are saying
- Infineon undercuts Wolfspeed's pricing by 20-30% from Kulim fab, stealing 40% EV share in 6-12 months.
- $520M Q3 2026 loss and negative margins burn $200M cash quarterly, forcing 8-10% debt refinancings.
- CHIPS Act denial creates $1.5B funding gap, halting 300mm expansion to Chinese rivals in 6-12 months.
What makes Wolfspeed unique
- Wolfspeed leads as world's only pure-play vertically integrated silicon carbide provider.
- Pioneered 300mm SiC wafers for AI data center packaging announced March 10, 2026.
- Launched first 10kV SiC MOSFET for grid modernization and AI data centers in 2026.
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Benefits
Childcare Support
Parental Leave
Tuition Reimbursement
Company News
Accelerating next generation power technologies. Power Devices, and specifically Wide bandgap (WBG) power devices are rapidly expanding into new, high-growth applications - from electrified transportation and renewable energy to AI data centers operating at megawatt scale power densities. This presentation examines how next-generation power technologies are being enabled by a shift from empirically heavy development toward simulation and AI driven workflows. Using examples across Si, SiC, GaN, and emerging materials, Silvaco Inc show how TCAD-based design at scale supports faster calibration, device optimization, and manufacturing readiness as application requirements diversify and accelerate. The talk introduces Silvaco's AI powered Fab Technology Co-Optimization (FTCO(TM) approach, which combines simulation at scale, smart DOE, and machine learning surrogate models to create physics based digital twins of devices and processes. Through case studies - including pGaN HEMTs, vertical GaN, and SiC DMOS technologies - Silvaco Inc demonstrate how calibrated TCAD models and ML surrogates enable rapid optimization, variability analysis, and yield prediction while significantly reducing development cycles and physical DOE cost. Attendees will gain practical insight into how digital twins and parallel simulation workflows are transforming power device design, from early technology pathfinding through manufacturing support and application level validation. What You Will Learn * Wide bandgap power market overview * FTCO accelerates design flows * AI-powered calibration, optimization and digital twins * WBG device examples: SiC, pGN, vertical GAN Presenter. Britt Brooks, Power Applications Engineer Britt has been at Silvaco since November 2024. He is an FAE for Power devices. Britt started his career at Texas Instruments and was a compact modeling engineer for 25+ years and an IC modeling engineer working as factory support for the FAE teams for 6 years. He was the first chairman of the Compact Model Council (now Coalition) for 7 years. Britt came to Silvaco after 4 years at Wolfspeed in the R&D team, working on scaling and predictive modeling of SiC Power MOSFETs. Additional support activities for internal corner modeling and external modeling questions for both discrete and module products were also his responsibility. Who should attend: Simulation engineers, device engineers, product managers, and engineering management. When: April 30, 2026 Where: Online Time: 10:00 Santa Clara Time: 11:00 Paris Time: 10:00 Beijing Language: English
Wolfspeed has completed a $475.9 million refinancing through a private placement of convertible notes and equity, using the proceeds to redeem existing senior secured notes. The silicon carbide technology company issued $379 million of 3.5% convertible senior secured notes due 2031 and approximately $96.9 million in common stock and pre-funded warrants. The transaction reduced Wolfspeed's senior secured note balance by approximately 43% and total debt by about $97 million. The company expects to lower annual interest expense by approximately $62 million. T. Rowe Price Associates, Fidelity Management & Research Company and other institutional investors participated in the placement. Goldman Sachs, Wells Fargo Securities and William Blair served as placement agents. The convertible notes mature on 15 March 2031, with interest payable semi-annually.
Wolfspeed has appointed Daihui Yu as regional president for Greater China, effective 16 March 2026. Yu will oversee business expansion across mainland China, Hong Kong and Taiwan, focusing on sales growth and brand development. Yu brings over 12 years of experience from Infineon Technologies, where he served as senior vice president and head of infrastructure and industry business for Greater China. He previously spent 15 years at Schneider Electric in sales and marketing roles and began his career as an R&D engineer at the China Academy of Space Technology. In his new role, Yu will develop go-to-market strategies aligned with Wolfspeed's global objectives. CEO Robert Feurle said Yu's strategic vision and operational excellence will be critical to success in the Greater China region.
Wolfspeed brings 300 mm silicon carbide technology to next-gen AI data center packaging. Tuesday, March 10th 2026 Wolfspeed, Inc. (NYSE: WOLF), a global leader in silicon carbide technology, today announced that its 300 mm silicon carbide (SiC) technology platform could serve as a foundational materials enabler for advanced AI and high-performance computing (HPC) heterogeneous packaging by the end of this decade. "As AI workloads continue to increase package size, power density, and integration complexity, we believe new materials foundations will be increasingly important to extend advanced packaging roadmaps," said Elif Balkas, Chief Technology Officer at Wolfspeed. "Our 300 mm silicon carbide platform is designed to align SiC's material advantages with industry-standard manufacturing infrastructure and expand the solution space for next-generation AI and HPC packaging architectures." Building on its January 2026 milestone of successfully producing a single-crystal 300 mm SiC wafer, Wolfspeed is engaging AI ecosystem partners to explore how 300 mm SiC substrates could help address the thermal, mechanical, and electrical performance barriers increasingly limiting next-generation AI and HPC packaging architectures. Driven by rapidly scaling AI workloads, data center integration roadmaps are pushing package sizes, power densities, and functional complexity beyond the limits of conventional materials. Wolfspeed's 300 mm SiC platform is designed to help address these challenges by combining high thermal conductivity, mechanical robustness, and favorable electrical properties within a scalable manufacturing format aligned to existing 300 mm semiconductor infrastructure. Through its ongoing partner evaluation program, Wolfspeed is collaborating with foundries, OSATs, system architects, and research institutions to assess technical feasibility, performance benefits, reliability, and integration pathways. This collaborative approach is intended to accelerate learning, help de-risk adoption, and help prepare the industry for the hybrid silicon carbide-silicon packaging architectures required by future AI workloads. A 300 mm SiC wafer format aligns advanced packaging materials with leading edge semiconductor fabrication and wafer level packaging processes, leveraging existing industry toolsets and infrastructure. This is intended to enable repeatable, high volume manufacturability while supporting cost scaling and ecosystem compatibility. In addition, the 300 mm format can enable fabrication of larger interposer and heat spreader components, supporting the industry's trajectory toward increasingly large package form factors and more complex multi-component semiconductor assemblies.
Wolfspeed has launched the industry's first commercially available 10,000-volt silicon carbide power MOSFET, marking a significant advancement in power electronics for grid modernisation, industrial electrification and AI data centre infrastructure. The 10kV SiC MOSFET offers intrinsic time-dependent dielectric breakdown lifetime analysis predicting 158,000 years of operation at continuous 20-volt gate bias. Wolfspeed is the first to solve bipolar degradation of 10kV SiC MOSFETs, maintaining reliable performance for mid-voltage UPS systems, wind power and solid-state transformer applications. The technology enables approximately 30% reduction in system costs through simplified architectures, improves power density by over 300% by increasing switching frequencies from 600Hz to 10,000Hz, and reduces system-level thermal requirements by up to 50% through 99% conversion efficiency.