ESSENTIAL DUTIES AND RESPONSIBILITIES:

In this position, the individual will be responsible to develop NAND memory trim, push the performance and reliability envelope of flash memory which is used in best-in-class high-density storage application
The individual will be responsible for working in partnership with NAND design and system development teams to drive technology & product development for improved performance and reliability
The individual will be responsible for defining, developing and executing NAND flash memory performance and reliability tests; analyze & report data to cross-functional teams to drive product and process improvements
The individual will communicate & work with members from process, design, reliability, and system groups to ensure timely product device support, memory qualification, and ramp of volume production
In this position the candidate will be part of a team that sits at the hub of activities between storage business units, technology development, and manufacturing

REQUIRED:

This position requires a M.S. or Ph.D. degree in Electrical Engineering, Applied physics, Material Science, or a related field, and 3+ years of relevant industry experience.
It requires in-depth knowledge of semiconductor device physics, familiarity with advanced semiconductor processes, and knowledge in design of experiment and data analysis.
The individual shall have strong analytical skills, and preferably have experience with scripting languages and/or statistical analysis tools.
The individual must have the proven ability to achieve results in a fast moving, dynamic environment.
The individual must be self-motivated and self-directed, must demonstrate ability to work well with people within and outside the team.