Principal HR Technology & AI Enablement Partner

Renesas Electronics Corporation today launched the RX74M and RX74N, two 32-bit microcontrollers (MCUs) that run at up to 600MHz. They are the first in the RX Family built on a 22nm process with embedded MRAM, and deliver more than twice the performance of the 240MHz RX72M and RX72N. The RX74M targets industrial automation equipment such as AC drives, robots, and programmable logic controllers. The RX74N is aimed at smart meters, power conditioners, and heating, ventilation, and air conditioning systems. MRAM writes data without a prior erase step, which speeds updates and cuts downtime. The RX74M also combines EtherCAT, Ethernet TSN, and CAN FD on one chip. Both devices add hardware security features, including support for post-quantum cryptography. Versions at 300MHz use more than 20% less power. Both MCUs are available now.

Renesas Electronics has launched its first 100V gallium nitride (GaN) power transistors for low-voltage applications. The new family of GaN FETs targets AI data centres, humanoid robotics, factory automation, industrial motor drives, power tools, and solar microinverters. The devices deliver up to 35% lower hard-switching figure-of-merit and up to 63% lower soft-switching figure-of-merit compared to comparable GaN products. They maintain silicon-compatible footprints for easy integration into existing designs. The transistors support the transition to 800V direct current power distribution and 48V bus architectures in AI servers and industrial infrastructure. They enable megahertz-class switching speeds whilst reducing passive component size, switching losses, and cooling requirements. The GaN FETs are available now in FCLGA and FCLGA-DSC packages, with corresponding evaluation boards.

Renesas Electronics has launched the industry's first 650V gallium nitride device with dual-side cooling for AI data centres. The TP65H020G4PLSGBD delivers 20 milliohms on-resistance in an 8x8mm package, 57% smaller than existing alternatives. The device targets 800V DC/DC intermediate bus converters in megawatt-scale data centres, addressing space and thermal constraints as rack power approaches megawatt levels. Dual-side cooling reduces top-side thermal impedance by 10% whilst maintaining compatibility with standard silicon gate drivers. Renesas is currently sampling the device to major data centre manufacturers. A 6kW reference design achieved 2.6 kW/in³ power density with 0.21% higher efficiency than equivalent alternatives. Mass production is planned for mid-2027. The device will be showcased at OCP Global Summit in San Jose, California, from 12-15 October.