Vertical Semiconductor focuses on power electronics for AI data centers by developing vertical gallium nitride (GaN) transistors. These transistors form a scalable platform in which current flows through the bulk of the GaN wafer, enabling higher power density and better thermal management. The vertical GaN design, compatible with standard CMOS manufacturing and demonstrated on 8-inch wafers, allows near-system-level power conversion to be placed closer to AI chips, reducing energy loss and cooling requirements. This sets the product apart from traditional lateral GaN devices and aligns with a plan to supply specialized, high-voltage transistors and integrated power delivery solutions to data center operators and hardware makers. The company’s goal is to accelerate adoption of this technology by delivering prototype packaged devices in 2025 and a fully integrated solution in 2026, supported by seed funding from investors such as Playground Global.
Company Size
11-50
Company Stage
Grant
Total Funding
$84M
Headquarters
Somerville, Massachusetts
Founded
2024
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