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Vertical Semiconductor

Vertical GaN transistors for data-center power

Device Engineer

Hardware EngineeringConfirmed live in the last 24 hours
Full-timeSomerville, MA, USA

About the Job

Requirements

  • A B.S., M.S., or PhD in Electrical Engineering, Physics, Materials Science, or a related field.
  • Experience with GaN, SiC, or other wide-bandgap semiconductors, ideally in power device applications.
  • Hands-on experience in at least one of device characterization, process integration, or device modeling and simulation.
  • Comfort working with data analysis tools such as Python or MATLAB.

Responsibilities

  • Support device architecture, process integration, and technology development for vertical GaN power devices.
  • Run device modeling and simulation to inform design and process decisions.
  • Perform on-wafer and discrete device characterization, including DC, CV, and dynamic testing.
  • Support failure analysis and reliability investigations for wide-bandgap power devices.
  • Develop and review GDS layouts and test structures to support device learning and validation.
  • Collaborate with epitaxy, process, packaging, and reliability teams on cross-functional device work.
  • Build and run application evaluation boards to connect device behavior to system-level performance.
  • Keep clear records of experiments, test data, and process learnings.

About the Company

Vertical Semiconductor

Vertical GaN transistors for data-center power

Vertical Semiconductor focuses on power electronics for AI data centers by developing vertical gallium nitride (GaN) transistors. These transistors form a scalable platform in which current flows through the bulk of the GaN wafer, enabling higher power density and better thermal management. The vertical GaN design, compatible with standard CMOS manufacturing and demonstrated on 8-inch wafers, allows near-system-level power conversion to be placed closer to AI chips, reducing energy loss and cooling requirements. This sets the product apart from traditional lateral GaN devices and aligns with a plan to supply specialized, high-voltage transistors and integrated power delivery solutions to data center operators and hardware makers. The company’s goal is to accelerate adoption of this technology by delivering prototype packaged devices in 2025 and a fully integrated solution in 2026, supported by seed funding from investors such as Playground Global.

Company size
11-50
Company stage
Grant
Total funding
$84M
Headquarters
Somerville, MA
Founded
2024

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