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Micron Technology

Makes memory and storage chips for AI and PCs

DRAM Pathfinding & Process Integration Engineer

Process EngineeringConfirmed live in the last 24 hours
Full-timeAlbany, NY, USA

About the Job

Requirements

  • A master's degree or equivalent experience in Electrical Engineering, Physics, Materials Science, Chemical Engineering, or a related technical field.
  • At least 5 years of semiconductor industry experience in process integration, process development, device engineering, or advanced research and development.
  • Strong understanding of memory technologies, including DRAM, NAND, SRAM, and emerging memory architectures.
  • Extensive knowledge of semiconductor device physics and process integration.
  • Experience with design of experiments methodologies, statistical analysis, and technical problem-solving.
  • Ability to influence and collaborate across multidisciplinary engineering teams.
  • AI proficiency or experience with AI-enabled ways of working.

Responsibilities

  • Lead investigation of upcoming DRAM technology concepts, materials, and process architectures.
  • Assess innovative scaling approaches supported by High-NA EUV and sophisticated patterning technologies.
  • Develop learning plans and technology evaluation approaches that speed up development decisions.
  • Develop key knowledge that impacts Micron's future memory technology roadmap.
  • Develop and integrate novel process flows enabling next-generation DRAM technologies.
  • Establish structural, electrical, reliability, and design-rule criteria for advanced memory architectures.
  • Lead process improvement efforts across lithography, etch, films, chemical mechanical polishing, metrology, and device engineering teams.
  • Balance performance, manufacturability, yield, reliability, and cost objectives.
  • Partner with lithography and process development teams to enable future High-NA EUV patterning solutions.
  • Evaluate process interactions affecting pattern fidelity, overlay performance, stochastic defectivity, and yield.
  • Identify integration needs for upcoming DRAM scaling approaches.
  • Work with suppliers and research partners to evaluate emerging lithography capabilities.
  • Build and complete design of experiments plans and technology learning experiments.
  • Analyze electrical, defectivity, metrology, reliability, and yield data using sophisticated statistical methodologies.
  • Leverage AI-assisted analytics and modeling techniques to accelerate process learning.
  • Communicate technical findings, risks, tradeoffs, and strategic recommendations to technical and business leadership.
  • Work directly with NY CREATES, equipment suppliers, and strategic research collaborators.
  • Lead technical discussions involving future technology requirements and capability development.
  • Support joint development activities while safeguarding Micron intellectual property.
  • Influence investment and development priorities through technical leadership.
  • Support the transition of successful pathfinding concepts into technology development and production.
  • Drive alignment between development, integration, and manufacturing organizations.
  • Document critical learning, technical assumptions, risks, and recommendations.
  • Ensure strong technology preparedness for upcoming DRAM generations.

Desired Qualifications

  • A Ph.D. or equivalent experience in Electrical Engineering, Physics, Materials Science, or a related subject area.
  • Experience in DRAM technology innovation and advanced memory scaling challenges.
  • Familiarity with EUV and High-NA EUV lithography.
  • Experience with technology scouting, process architecture formulation, or advanced process integration.
  • Experience working within semiconductor consortia, supplier partnerships, or research teams.
  • Familiarity with Python, JMP, SQL, machine learning, and sophisticated analytics tools.
  • A record of leading technical initiatives involving multifunctional teams in fast-paced development environments.

About the Company

Micron Technology

Makes memory and storage chips for AI and PCs

Micron Technology designs and manufactures memory and storage chips, mainly DRAM and NAND flash, used in data centers, PCs, phones, cars and industrial equipment. It is one of only three companies that make HBM, the stacked high-bandwidth memory placed beside processors in AI servers, and it is the largest memory chipmaker based in the United States. Unlike chip designers that outsource production, Micron runs its own fabs and assembly sites in the United States and across Asia. It earns money by selling chips, memory modules and solid-state drives to cloud providers, device makers and distributors. Micron was founded in 1978 and is headquartered in Boise, Idaho.

Company size
10,001+
Company stage
IPO
Headquarters
Boise, ID
Founded
1978

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