NAND Product Development Engineer

Job Description

We are seeking an experienced NAND Product/Test Engineer to lead burn-in and high-speed I/O test development for advanced NAND Flash memory products. The role involves defining test strategies, executing electrical characterization and validation, analyzing test data to drive yield and quality improvements, and optimizing test methodologies for efficiency and coverage. The engineer will collaborate closely with design, process, reliability, and SSD engineering teams to resolve complex product and test challenges through component and system-level co-optimization. The ideal candidate holds a Master's degree in Electrical Engineering, Computer Engineering, Semiconductor Circuits, or a related field, with 5+ years of experience in semiconductor product or test engineering. Strong knowledge of NAND Flash architecture, burn-in and high-speed I/O test systems, statistical data analysis, and failure analysis techniques is required.

Major responsibilities include:

• Develop burn-in and high speed I/O test plans, procedures, and validation methodologies for NAND flash memory components Lead the execution of electrical testing of NAND components to validate functionality, performance, and reliability.
• Analyze test data to identify trends, anomalies, and areas for improvement in product design or manufacturing processes.
• Optimize test methodologies to improve test coverage, efficiency, and cycle time. Provide technical expertise and support for yield enhancement and failure analysis activities.
• Collaborate with design, process, and reliability engineering teams to troubleshoot and resolve complex test failures.
• Work close with SSD engineering teams, to ensure the integration of the NAND into the SSD through component/system co-optimization.

Qualifications

• Master's degree in Electrical/Electronic Engineering, Computer Engineering, Semiconductor Circuit, or related fields.
• 5+ years of experience in logic/memory product engineering or test engineering.
• Proficient in statistical data analysis and electrical failure analysis to segment and determine root cause of test failures.
• Knowledge of burn-in and high speed I/0 test platforms and architecture.
• Knowledge of NAND Flash memory technology, including architecture and operation

Additional Information

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Compensation: 320400 to 452300 (CNY) (YEARLY)