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Micron Technology

Makes memory and storage chips for AI and PCs

HBM Design Architect

Silicon & ASIC DesignConfirmed live in the last 24 hours
Full-timeRichardson, TX, USANo salary listedIn-person

About the Job

Requirements

  • A BS in Electrical Engineering, Physics, Materials Science, or a related field with at least 7 years of relevant experience; an MS with at least 5 years; or a PhD with at least 3 years.
  • Solid grounding in mainstream DRAM and/or HBM product architecture and design, including array, periphery, datapath, timing, and power.
  • Deep understanding of DRAM or emerging memory cell and array operation, including sensing, retention, disturb, and variability.
  • Working knowledge of semiconductor process technology and its impact on device and circuit behavior.

Responsibilities

  • Lead architecture and feasibility assessments for emerging memories, including DRAM, gain cell, and stacked or vertical DRAM, and advanced integration such as hybrid bonding and fine-pitch TSV.
  • Apply mainstream DRAM/HBM product knowledge—including array architecture, timing parameters, bandwidth, power, RAS, and JEDEC requirements—to define requirements for product viability of new technologies.
  • Translate device and process characteristics, including retention, variability, cell and array physics, and BEOL and bonding constraints, into product-level requirements for bandwidth, latency, power, thermals, density, and reliability.
  • Identify technology-product gaps, define technology targets, and drive de-risking plans that include test vehicles, DOEs, and modeling and simulation strategies.
  • Partner with process integration, device, packaging, and design teams to define technology-to-product intercept points and decision criteria.
  • Lead system-technology co-optimization (STCO) studies across array architecture, periphery/CMOS-under-array, interconnect, PDN, and thermal trade-offs.
  • Develop roadmap proposals and present recommendations to technical leadership and cross-site working groups.

Desired Qualifications

  • PhD or equivalent experience with at least 10 years in DRAM/HBM build, memory technology, or pathfinding.
  • Direct experience with vertically coordinated DRAM technologies, gain-cell structures (2T0C/IGZO or similar), stacked memory builds, or other emerging memory programs.
  • Experience with hybrid bonding, TSV-based 3D integration, or advanced packaging technology development.

About the Company

Micron Technology

Makes memory and storage chips for AI and PCs

Micron Technology designs and manufactures memory and storage chips, mainly DRAM and NAND flash, used in data centers, PCs, phones, cars and industrial equipment. It is one of only three companies that make HBM, the stacked high-bandwidth memory placed beside processors in AI servers, and it is the largest memory chipmaker based in the United States. Unlike chip designers that outsource production, Micron runs its own fabs and assembly sites in the United States and across Asia. It earns money by selling chips, memory modules and solid-state drives to cloud providers, device makers and distributors. Micron was founded in 1978 and is headquartered in Boise, Idaho.

Company size
10,001+
Company stage
IPO
Headquarters
Boise, ID
Founded
1978

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