C

Cambridge GaN Devices

Designs energy-efficient GaN power devices

Senior Analog IC Design Engineer

Silicon & ASIC DesignConfirmed live in the last 24 hours
Full-timeCambridge, UKIn-person

About the Job

Requirements

  • A Master’s degree in a relevant engineering or science subject.
  • Comprehensive knowledge and understanding of analog integrated circuit design.
  • Skill and experience in the electronic design automation design process, including schematic capture, analog simulations, chip layout, design rule checking, layout versus schematic, parasitic extraction, and post-layout simulation.
  • Knowledge and understanding of electrical testing and characterisation of analog integrated circuits for prototyping and mass production.
  • Strong project management skills.
  • Practical skills and experience.

Responsibilities

  • Design and lay out gallium nitride power integrated circuits using electronic design automation tools, including schematic capture, analog simulations, chip layout review, parasitic extraction, and post-layout simulation.
  • Design and implement solutions for testing gallium nitride power integrated circuits, and conduct tests at wafer level and on packaged devices.
  • Prepare detailed documentation, evaluate chips, and debug them.
  • Develop SPICE models of gallium nitride integrated circuits.
  • Generate intellectual property and support the management team with patent applications and intellectual property management.

Desired Qualifications

  • Experience in analog design using gallium nitride.
  • Experience in the semiconductor industry.
  • Experience with power integrated circuits.
  • Experience with Cadence Virtuoso and Mentor Calibre.

About the Company

Cambridge GaN Devices

Designs energy-efficient GaN power devices

Cambridge GaN Devices designs GaN-based power semiconductors and outsources manufacturing as a fabless company. Its ICeGaN family uses enhancement-mode GaN transistors that run with standard silicon gate drivers and include on-chip logic and protection, delivering a single-chip solution with up to 50% lower power losses than silicon; the H2 series adds an on-chip circuit for better light-load and no-load efficiency. It stands out by prioritizing easy integration (no special circuitry or negative voltages) and offering a product roadmap from consumer electronics to data centers and EV powertrains, with Combo ICeGaN modules that pair GaN HEMTs with traditional IGBTs for high-power needs. The goal is to enable more energy-efficient power conversion to reduce energy use and CO2 emissions across electronics, data centers, industry, and mobility.

Company size
51-200
Company stage
Series C
Total funding
$64.6M
Headquarters
Cambridge, United Kingdom
Founded
2016

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