Tesla

Makes electric cars, robotaxis and grid batteries

Memory Process Integration Engineer

Process EngineeringConfirmed live in the last 24 hours

Full-timeAustin, TX, USANo salary listed

About the Job

Requirements

A degree in Electrical Engineering, Materials Science, or Chemical Engineering, or equivalent experience.
At least 5 years of engineering experience in a high-volume memory fab involving DRAM, 3D NAND, or emerging memory.
Deep knowledge of at least one advanced DRAM node below 25 nm and its capacitor integration tradeoffs.
Hands-on experience with memory-specific integration challenges, including high aspect ratio etch, capacitor dielectric reliability, storage node contact resistance, and retention optimization.
Proficiency with statistical tools such as JMP, R, or Python for design of experiments, statistical process control, and memory bit-yield analysis.
Experience with DRAM capacitor architectures, including deep trench, stacked capacitor (cylinder or pillar), or high-k dielectric integration.
Familiarity with 3D memory architectures such as 3D NAND or 3D DRAM, or emerging memory technologies such as MRAM, RRAM, or FeRAM.
Experience establishing a new memory process flow from scratch in a greenfield environment.
Ability to drive cross-functional alignment across unit process, equipment, and memory design teams.
Ability to travel internationally 10% of the time.

Responsibilities

Own end-to-end process integration for DRAM cell structures, from capacitor design through full-flow execution and high-volume manufacturing readiness.
Define integration schemes for advanced DRAM nodes below 20 nm half-pitch, including deep trench or stacked capacitor architectures.
Develop memory cell integration flows that optimize capacitance density, leakage control, and refresh characteristics.
Partner with etch, deposition, implant, and chemical mechanical polishing process teams to define process windows for memory-specific modules, including shallow trench isolation, wordline formation, storage node contact, capacitor dielectric, and cell plate structures.
Develop and maintain process flow documentation and integration decision logs for memory arrays and peripheral circuits.
Lead root cause analysis and systematic yield improvement across full-flow integration splits, including pattern-dependent failure analysis.
Work with equipment, metrology, and data teams to establish inline monitoring and statistical process control at key integration checkpoints for memory-critical parameters, including capacitance, retention time, and junction leakage.
Collaborate with memory circuit design teams to validate sense amplifier margins, refresh timing, and device frequency targets.
Drive integration development for emerging memory technologies such as MRAM, RRAM, or 3D DRAM as the memory roadmap expands.
Support technology transfer and ramp readiness as memory production scales.

Category	Terafab
Location	AUSTIN, Texas
Requisition ID	278648
Type	Full-time

Job Description

<p>We are building Terafab, a vertically integrated semiconductor factory at an unprecedented scale. The facility houses logic, memory, packaging, test, and lithography mask production under one roof, optimized for rapid iteration and maximum compute density per square foot.</p><p>As a Memory Process Integration Engineer, you will own the integration of unit processes for DRAM and emerging memory technologies, driving density, retention reliability, and manufacturability from early concept through high-volume production. This is a ground-level role at one of the most ambitious fab programs in the world.</p>

Job Responsibilities

Own end-to-end process integration for DRAM cell structures from capacitor design through full-flow execution and HVM readiness
Define integration schemes for advanced DRAM nodes (sub-20nm half-pitch) including deep trench or stacked capacitor architectures
Develop memory cell integration flows optimizing for capacitance density, leakage control, and refresh characteristics
Partner with process teams (etch, deposition, implant, CMP) to define process windows for memory-specific modules: STI, wordline formation, storage node contact, capacitor dielectric, and cell plate structures
Develop and maintain process flow documentation, integration decision logs for memory arrays and peripheral circuits
Lead root cause analysis and systematic yield improvement across full-flow integration splits, including pattern-dependent fail analysis
Interface with equipment, metrology, and data teams to establish inline monitoring and SPC at key integration checkpoints for memory-critical parameters: capacitance, retention time, junction leakage
Collaborate with memory circuit design teams to validate sense amplifier margins, refresh timing, and device frequency targets
Drive integration development for emerging memory technologies (MRAM, RRAM, or 3D DRAM) as Terafab expands memory roadmap
Support technology transfer and ramp readiness as Terafab scales memory production

Job Requirements

Degree in Electrical Engineering, Materials Science, Chemical Engineering, or equivalent experience
5+ years of engineering experience in a high-volume memory fab (DRAM, 3D NAND, or emerging memory)
Deep knowledge of at least one advanced DRAM node (sub-25nm) and its capacitor integration tradeoffs
Hands-on experience with memory-specific integration challenges: high aspect ratio etch, capacitor dielectric reliability, storage node contact resistance, retention optimization
Proficiency with statistical tools (JMP, R, Python) for DOE design, SPC, and memory bit-yield analysis
Experience with DRAM capacitor architectures: deep trench, stacked capacitor (cylinder or pillar), or high-k dielectric integration
Familiarity with 3D memory architectures (3D NAND, 3D DRAM) or emerging memory technologies (MRAM, RRAM, FeRAM)
Experience standing up a new memory process flow from scratch in a greenfield environment
Demonstrated ability to drive cross-functional alignment across unit process, equipment, and memory design teams
Ability to travel internationally (10%)

About the Company

Tesla

Makes electric cars, robotaxis and grid batteries

Tesla makes electric cars and batteries that store power for homes and utilities, and it develops self-driving software and humanoid robots. In 2023, its Model Y became the first electric vehicle to rank as the world's best-selling car. Buyers order the Model 3 sedan, Model Y SUV, or Cybertruck pickup directly from Tesla instead of through dealers, and they charge on its Supercharger fast-charging network. It also sells Megapack and Powerwall batteries, runs a robotaxi service, and charges drivers a monthly fee for self-driving software that still needs their supervision. Tesla was founded in 2003, with Elon Musk as its lead early investor and a recognized co-founder, and it is based in Austin, Texas.

Company size: 10,001+
Company stage: IPO
Headquarters: Austin, TX
Founded: 2003

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