Texas Instruments

Makes analog and embedded chips in its own plants

Wide Bandgap Process Integration Engineer

Silicon & ASIC DesignConfirmed live in the last 24 hours

Full-timeDallas, TX, USANo salary listedIn-person

About the Job

Requirements

A PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or a related degree is required.
Research experience in GaN or compound semiconductor device/process development is required.
A minimum cumulative GPA of 3.0/4.0 is required.
The candidate should understand power FETs and other relevant semiconductor device physics.
The candidate should understand typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and their underlying process physics.
The candidate should understand electrical and materials characterization methodologies and statistical data analysis.
Hands-on laboratory experience is needed.
Excellent verbal and written communication skills are required for interfacing with multiple teams.

Responsibilities

Lead the development, characterization, and optimization of gallium nitride (GaN) power devices.
Perform GaN device simulations using technology computer-aided design (TCAD), device design, and layout.
Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges.
Collaborate with fab and manufacturing engineers to ensure device manufacturability.
Collaborate with reliability engineers to meet device reliability requirements.
Investigate root causes of failures to improve device, process, reliability, and yield.

Desired Qualifications

Familiarity with GaN-on-Si technology for power switching applications.
Experience with fab tools and process modules/integration.
Strong communication and data analysis skills.
Knowledge of device physics, reliability mechanisms, and packaging interaction.
Ability to work in teams and collaborate effectively with people in different functions.
Ability to take initiative and drive for results.
Sound decision-making capabilities and the ability to prioritize tasks and adapt accordingly.

Change the world. Love your job.

TI is seeking an innovative and highly skilled GaN Process Integration Engineer to join our cutting-edge Gallium Nitride (GaN) Technology Development Team. This role offers the unique opportunity to work at the forefront of developing Gallium Nitride technology that is redefining the power electronics landscape — enabling higher efficiency, faster switching, and smaller, more reliable systems. You will be instrumental in developing and scaling GaN power process technologies for high-volume manufacturing. You’ll collaborate across disciplines to deliver state-of-the-art devices with world-class performance and reliability.

About the job

This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:

GaN device simulations (TCAD), device design, layout
Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges
Collaboration with fab/manufacturing engineers to ensure device manufacturability
Collaboration with reliability engineers to meet device reliability requirements
Failure root-cause investigation for device/process/reliability/yield improvement

The ideal candidate is expected to have a strong understanding of the following:

Power FETs and other relevant semiconductor device physics
Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
Electrical and materials characterization methodologies and statistical data analysis
Strong hands-on lab experience and excellent problem solving skills are also needed
Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams

Minimum requirements:

PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
Research experience in GaN or compound semiconductor device/process development
Minimum cumulative GPA of 3.0/4.0

Preferred qualifications:

Familiarity with GaN-on-Si technology for power switching applications
Experience with fab tools and process modules/Integration
Strong communication and data analysis skills
Knowledge of device physics, reliability mechanisms, and packaging interaction
Ability to work in teams and collaborate effectively with people in different functions
Ability to take the initiative and drive for results
Sound decision-making capabilities and the ability to prioritize tasks and adapt accordingly

About the Company

Texas Instruments

Makes analog and embedded chips in its own plants

Texas Instruments designs and makes analog and embedded processing chips, the basic parts inside cars, factory equipment, data centers, and consumer electronics, and it sells one of the broadest chip catalogs in the industry. In 1958, its engineer Jack Kilby built the first integrated circuit, the building block of modern electronics, and later won a Nobel Prize for it. Its analog chips regulate power and convert signals such as sound and heat into data, while its microcontrollers act as small built-in computers, and TI earns money selling both to device makers. It also makes the graphing calculators many students use in math class. Texas Instruments was founded in 1930 and is based in Dallas, Texas.

Company size: 10,001+
Company stage: IPO
Headquarters: Dallas, TX
Founded: 1930

Recently Posted Jobs

Explore more opportunities at Texas Instruments

See more jobs